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1

Nand Flash Memory Technologies (Aritome/Nand) || Reliability Of Nand Flash Memory

Aritome, Seiichi

Year:

2015

Language:

english

File:

PDF, 5.13 MB

english, 2015

2

Array Architectures for 3-D nand Flash Memories

Micheloni, Rino, Aritome, Seiichi, Crippa, Luca

Journal:

Proceedings of the IEEE

Year:

2017

Language:

english

File:

PDF, 3.17 MB

english, 2017

3

[IEEE 2017 IEEE International Memory Workshop (IMW) - Monterey, CA, USA (2017.5.14-2017.5.17)] 2017 IEEE International Memory Workshop (IMW) - Data-Retention Characteristics Comparison of 2D and 3D TLC NAND Flash Memories

Mizoguchi, Kyoji, Takahashi, Tomonori, Aritome, Seiichi, Takeuchi, Ken

Year:

2017

Language:

english

File:

PDF, 2.38 MB

english, 2017

4

Scaling challenge of Self-Aligned STI cell (SA-STI cell) for NAND flash memories

Aritome, Seiichi, Kikkawa, Takamaro

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 2.39 MB

english, 2013

5

Stress-induced leakage current of tunnel oxide derived from flash memory read-disturb characteristics

Satoh, S., Hemink, G., Hatakeyama, K., Aritome, S.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 126 KB

english, 1998

6

Reliability issues of flash memory cells

Aritome, S., Shirota, R., Hemink, G., Endoh, T., Masuoka, F.

Journal:

Proceedings of the IEEE

Year:

1993

Language:

english

File:

PDF, 1.18 MB

english, 1993

7

Nand Flash Memory Technologies (Aritome/Nand) || Challenges Of Three-Dimensional Nand Flash Memory

Aritome, Seiichi

Year:

2015

Language:

english

File:

PDF, 5.30 MB

english, 2015

8

Nand Flash Memory Technologies (Aritome/Nand) || Principle of Nand Flash Memory

Aritome, Seiichi

Year:

2015

Language:

english

File:

PDF, 1.63 MB

english, 2015

9

Nand Flash Memory Technologies (Aritome/Nand) || Introduction

Aritome, Seiichi

Year:

2015

Language:

english

File:

PDF, 367 KB

english, 2015

10

Nand Flash Memory Technologies (Aritome/Nand) || Three-Dimensional Nand Flash Cell

Aritome, Seiichi

Year:

2015

Language:

english

File:

PDF, 8.33 MB

english, 2015

11

Nand Flash Memory Technologies (Aritome/Nand) || Advanced Operation for Multilevel Cell

Aritome, Seiichi

Year:

2015

Language:

english

File:

PDF, 2.29 MB

english, 2015

12

Nand Flash Memory Technologies (Aritome/Nand) || Conclusions

Aritome, Seiichi

Year:

2015

Language:

english

File:

PDF, 65 KB

english, 2015

13

A side-wall transfer-transistor cell (SWATT cell) for highly reliable multi-level NAND EEPROMs

Aritome, S., Takeuchi, Y., Sato, S., Watanabe, I., Shimizu, K., Hemink, G., Shirota, R.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 431 KB

english, 1997

14

A novel three-dimensional dual control-gate with surrounding floating-gate (DC-SF) NAND flash cell

Aritome, Seiichi, Whang, SungJin, Lee, KiHong, Shin, DaeGyu, Kim, BeomYong, Kim, MinSoo, Bin, JinHo, Han, JiHye, Kim, SungJun, Lee, BoMi, Jung, YoungKyun, Cho, SungYoon, Shin, ChangHee, Yoo, HyunSeung

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 1.11 MB

english, 2013

15

[IEEE Proceedings of International Reliability Physics Symposium - Dallas, TX, USA (1996.04.30-1996.05.2)] Proceedings of International Reliability Physics Symposium RELPHY-96 - Trapped hole enhanced stress induced leakage currents in NAND EEPROM tunnel oxides

Hemink, G.J., Shimizu, K., Aritome, S., Shirota, R.

Year:

1996

Language:

english

File:

PDF, 633 KB

english, 1996

16

[IEEE 1999 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC. First Edition - San Francisco, CA, USA (15-17 Feb. 1999)] 1999 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC. First Edition (Cat. No.99CH36278) - A 130 mm/sup 2/ 256 Mb NAND flash with shallow trench isolation technology

Imamiya, K., Sugiura, Y., Nakamura, H., Himeno, T., Takeuchi, K., Ikehashi, T., Kanda, K., Hosono, K., Shirota, R., Aritome, S., Shimizu, K., Hatakeyama, K., Sakui, K.

Year:

1999

Language:

english

File:

PDF, 276 KB

english, 1999

17

NAND Flash Innovations

Aritome, Seiichi

Journal:

IEEE Solid-State Circuits Magazine

Year:

2013

Language:

english

File:

PDF, 3.13 MB

english, 2013

18

[IEEE International Technical Digest on Electron Devices - San Francisco, CA, USA (9-12 Dec. 1990)] International Technical Digest on Electron Devices - A 2.3 mu m/sup 2/ memory cell structure for 16 Mb NAND EEPROMs

Shirota, R., Nakayama, R., Kirisawa, R., Momodomi, M., Sakui, K., Itoh, Y., Aritome, S., Endoh, T., Hatori, F., Masuoka, F.

Year:

1990

Language:

english

File:

PDF, 211 KB

english, 1990

19

[IEEE International Conference on Microelectronic Test Structures - Nara, Japan (22-25 March 1995)] Proceedings International Conference on Microelectronic Test Structures - Stress induced leakage current of tunnel oxide derived from flash memory read-disturb characteristics

Satoh, S., Hemink, G.J., Hatakeyama, F., Aritome, S.

Year:

1995

Language:

english

File:

PDF, 398 KB

english, 1995

20

[IEEE Digest of Technical Papers.1990 Symposium on VLSI Technology - Honolulu, Hawaii, USA (1990.06.4-1990.06.7)] Digest of Technical Papers.1990 Symposium on VLSI Technology - A NAND structured cell with a new programming technology for highly reliable 5 V-only flash EEPROM

Kirisawa, R., Aritome, S., Nakayama, R., Endoh, T., Shirota, R., Masuoka, F.

Year:

1990

Language:

english

File:

PDF, 167 KB

english, 1990

21

[IEEE International Electron Devices Meeting - Washington, DC, USA (10-13 Dec. 1995)] Proceedings of International Electron Devices Meeting - A novel side-wall transfer-transistor cell (SWATT cell) for multi-level NAND EEPROMs

Aritome, S., Takeuchi, Y., Sato, S., Watanabe, H., Shimizu, K., Hemink, G., Shirota, R.

Year:

1995

Language:

english

File:

PDF, 365 KB

english, 1995

22

[IEEE International Electron Devices Meeting. Technical Digest - San Francisco, CA, USA (8-11 Dec. 1996)] International Electron Devices Meeting. Technical Digest - Corner-rounded shallow trench isolation technology to reduce the stress-induced tunnel oxide leakage current for highly reliable flash memories

Watanabe, H., Shimizu, K., Takeuchi, Y., Aritome, S.

Year:

1996

Language:

english

File:

PDF, 368 KB

english, 1996

23

An Advanced NAND-Structure Cell Technology for Reliable 3.3 V 64 Mb Electrically Erasable and Programmable Read Only Memories (EEPROMs)

Aritome, Seiichi, Hatakeyama, Ikuo, Endoh, Tetsuo, Yamaguchi, Tetsuya, Shuto, Susumu, Iizuka, Hirohisa, Maruyama, Tooru, Watanabe, Hiroshi, Hemink, Gertjan, Sakui, Koji, Tanaka, Tomoharu, Momodomi, Ma

Journal:

Japanese Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 1.86 MB

english, 1994

24

Nand Flash Memory Technologies (Aritome/Nand) || Scaling Challenge Of Nand Flash Memory Cells

Aritome, Seiichi

Year:

2015

Language:

english

File:

PDF, 4.11 MB

english, 2015

25

Nand Flash Memory Technologies (Aritome/Nand) || Front Matter

Aritome, Seiichi

Year:

2015

Language:

english

File:

PDF, 239 KB

english, 2015

26

Nand Flash Memory Technologies (Aritome/Nand) || Index

Aritome, Seiichi

Year:

2015

Language:

english

File:

PDF, 105 KB

english, 2015

27

[IEEE 2017 IEEE International Reliability Physics Symposium (IRPS) - Monterey, CA, USA (2017.4.2-2017.4.6)] 2017 IEEE International Reliability Physics Symposium (IRPS) - RTN impact on data-retention failure/recovery in scaled (∼1Ynm) TLC NAND flash memories

Aritome, Seiichi, Takahashi, Tomonori, Mizoguchi, Kyoji, Takeuchi, Ken

Year:

2017

Language:

english

File:

PDF, 491 KB

english, 2017

28

Cobalt–Carbon Bond Formation Reaction via Ligand Reduction of Porphycene–Cobalt(II) Complex and Its Noninnocent Reactivity

Koide, Taro, Aritome, Isao, Saeki, Tatsuya, Morita, Yoshitsugu, Shiota, Yoshihito, Yoshizawa, Kazunari, Shimakoshi, Hisashi, Hisaeda, Yoshio

Journal:

Year:

2018

Language:

english

File:

PDF, 2.55 MB

english, 2018

29

Fabrication method and efficiency of new soft X-ray diffraction gratings: Bakable laminar gratings and transmission gratings for synchrotron radiation spectroscopy

H. Aritome, S. Matsui, K. Moriwaki, H. Aoki, S. Namba, S. Suga, A. Mikuni, M. Seki, M. Taniguchi

Journal:

Nuclear Instruments and Methods in Physics Research

Year:

1983

Language:

english

File:

PDF, 290 KB

english, 1983

30

Fabrication of x-ray zone plates with a minimum zone width smaller than 100nm by electron beam lithography

H. Aritome, K. Nagata, S. Namba

Journal:

Microelectronic Engineering

Year:

1985

Language:

english

File:

PDF, 813 KB

english, 1985

31

New macrocyclic ligands having discrete metal binding sites

Hisashi Shimakoshi, Hiroki Takemoto, Isao Aritome, Yoshio Hisaeda

Journal:

Tetrahedron Letters

Year:

2002

Language:

english

File:

PDF, 142 KB

english, 2002

32

Syntheses of large-membered macrocycles having multiple hydrogen bonding moieties

Hisashi Shimakoshi, Takayuki Kai, Isao Aritome, Yoshio Hisaeda

Journal:

Tetrahedron Letters

Year:

2002

Language:

english

File:

PDF, 206 KB

english, 2002

33

Polymers of α-substituted benzyl methacrylates as a new type of electron-beam resist

Koichi Hatada, Tatsuki Kitayama, Shigeru Danjo, Yutaka Tsubokura, Heimei Yuki, Kazuyuki Moriwaki, Hiroaki Aritome, Susumu Namba

Journal:

Polymer Bulletin

Year:

1983

Language:

english

File:

PDF, 313 KB

english, 1983

34

Highly sensitive self developing electron-beam resist of aldehyde copolymer

Koichi Hatada, Tatsuki Kitayama, Shigeru Danjo, Heimei Yuki, Hiroaki Aritome, Susumu Namba, Kazuo Nate, Hitoshi Yokono

Journal:

Polymer Bulletin

Year:

1982

Language:

english

File:

PDF, 201 KB

english, 1982

35

Time delay in CdS laser pumped by an electron beam

H. Aritome, K. Masuda, S. Namba

Journal:

Optical and Quantum Electronics

Year:

1970

Language:

english

File:

PDF, 702 KB

english, 1970

36

Fatal Subacute Hepatitis Associated With Para-aminosalicylic Acid

Keisuke Matsui, Terucbika Aritome

Journal:

Pathology International

Year:

1958

Language:

english

File:

PDF, 928 KB

english, 1958

37

X-ray diffraction gratings for synchrotron radiation spectroscopy: a new fabrication method

Matsui, Shinji, Moriwaki, Kazuyuki, Aritome, Hiroaki, Namba, Susumu, Shin, Shik, Suga, Shigemasa

Journal:

Year:

1982

Language:

english

File:

PDF, 862 KB

english, 1982

38

[Widerkehr & Associates 1996 Symposium on VLSI Circuits. Digest of Technical Papers - Honolulu, HI, USA (13-15 June 1996)] 1996 Symposium on VLSI Circuits. Digest of Technical Papers - A compact on-chip ECC for low cost flash memories

Tanzawa, T., Tanaka, T., Takeuchi, K., Shirota, R., Aritome, S., Watanabe, H., Hemink, G., Shimizu, K., Sato, S., Takeuchi, Y., Ohuchi, K.

Year:

1996

Language:

english

File:

PDF, 278 KB

english, 1996

39

BiCMOS circuit technology for high-speed DRAMs

Watanabe, S., Sakui, K., Fuse, T., Hara, T., Aritome, S., Hieda, K.

Journal:

IEEE Journal of Solid-State Circuits

Year:

1993

Language:

english

File:

PDF, 718 KB

english, 1993

40

A high-density NAND EEPROM with block-page programming for microcomputer applications

Iwata, Y., Momodomi, M., Tanaka, T., Oodaira, H., Itoh, Y., Nakayama, R., Kirisawa, R., Aritome, S., Endoh, T., Shirota, R., Ohuchi, K., Masuoka, F.

Journal:

IEEE Journal of Solid-State Circuits

Year:

1990

Language:

english

File:

PDF, 889 KB

english, 1990

41

A compact on-chip ECC for low cost flash memories

Tanzawa, T., Tanaka, T., Takeuchi, K., Shirota, R., Aritome, S., Watanabe, H., Hemink, G., Shimizu, K., Sato, S., Takeuchi, Y., Ohuchi, K.

Journal:

IEEE Journal of Solid-State Circuits

Year:

1997

Language:

english

File:

PDF, 181 KB

english, 1997

42

A 130-mm2, 256-Mbit NAND flash with shallow trench isolation technology

Imamiya, K., Sugiura, Y., Nakamura, H., Himeno, T., Takeuchi, K., Ikehashi, T., Kanda, K., Hosono, K., Shirota, R., Aritome, S., Shimizu, K., Hatakeyama, K., Sakui, K.

Journal:

IEEE Journal of Solid-State Circuits

Year:

1999

Language:

english

File:

PDF, 481 KB

english, 1999

43

Time duration of output pulse in electron-beam-pumped CdS laser

Aritome, H., Masuda, K., Namba, S.

Journal:

IEEE Journal of Quantum Electronics

Year:

1971

Language:

english

File:

PDF, 609 KB

english, 1971

44

Fabrication of an optical directional coupler of CdTe by electron beam lithography and ion etching

Nishimura, T., Aritome, H., Namba, S.

Journal:

IEEE Journal of Quantum Electronics

Year:

1980

Language:

english

File:

PDF, 1.47 MB

english, 1980

45

An experimental 4-Mbit CMOS EEPROM with a NAND-structured cell

Momodomi, M., Itoh, Y., Shirota, R., Iwata, Y., Nakayama, R., Kirisawa, R., Tanaka, T., Aritome, S., Endoh, T., Ohuchi, K., Masuoka, F.

Journal:

IEEE Journal of Solid-State Circuits

Year:

1989

Language:

english

File:

PDF, 842 KB

english, 1989

46

Fluorine-enhanced photo-oxidation of silicon under ArF excimer laser irradiation in an O2+NF3 gas mixture

Morita, M., Aritome, S., Tanaka, T., Hirose, M.

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 411 KB

english, 1986

47

Advanced DC-SF Cell Technology for 3-D NAND Flash

Aritome, Seiichi, Noh, Yoohyun, Yoo, Hyunseung, Choi, Eun Seok, Joo, Han Soo, Ahn, Youngsoo, Han, Byeongil, Chung, Sungjae, Shim, Keonsoo, Lee, Keunwoo, Kwak, Sanghyon, Shin, Sungchul, Choi, Iksoo, Na

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.71 MB

english, 2013

48

Synthesis, Structure, and Chemical Property of the First Fluorine-Containing Porphycene

Hayashi, Takashi, Nakashima, Yuji, Ito, Kazuyuki, Ikegami, Takahiro, Aritome, Isao, Suzuki, Akihiro, Hisaeda, Yoshio

Journal:

Organic Letters

Year:

2003

Language:

english

File:

PDF, 120 KB

english, 2003

49

Synthesis, Characterization, and Autoreduction of a Highly Electron-Deficient Porphycenatoiron(III) with Trifluoromethyl Substituents

Hayashi, Takashi, Nakashima, Yuji, Ito, Kazuyuki, Ikegami, Takahiro, Aritome, Isao, Aoyagi, Katsuhiro, Ando, Tsutomu, Hisaeda, Yoshio

Journal:

Inorganic Chemistry

Year:

2003

Language:

english

File:

PDF, 114 KB

english, 2003

50

[IEEE 1992 Symposium on VLSI Circuits Digest of Technical Papers - Seattle, WA, USA (4-6 June 1992)] 1992 Symposium on VLSI Circuits Digest of Technical Papers - A quick intelligent program architecture for 3 V-only NAND-EEPROMs

Tanaka, T., Tanaka, Y., Nakamura, H., Oodaira, H., Aritome, S., Shirota, R., Masuoka, F.

Year:

1992

Language:

english

File:

PDF, 175 KB

english, 1992